ST · FETs & Power MOSFETs · MPN STI24N60M2
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| Gate Charge(Qg) | 29nC@480V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.06nF |
| Type | N-Channel |
650V 18A 2V 150W 190mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS