ST STI22NM60N

ST · FETs & Power MOSFETs · MPN STI22NM60N

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.33nF

Technical details

600V 16A 4V 125W 220mΩ@10V 1 N-channel I2PAK Single FETs, MOSFETs RoHS

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