ST STI20N65M5

ST · FETs & Power MOSFETs · MPN STI20N65M5

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)38pF
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation130W
RDS(on)190mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3.7pF
Number1 N-channel
Input Capacitance(Ciss)1.434nF
TypeN-Channel

Technical details

N-Channel 650V 18A 130W Through Hole I2PAK(TO-262)

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