ST · FETs & Power MOSFETs · MPN STI18N65M5
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.24nF |
650V 15A 5V 110W 220mΩ@10V 1 N-channel I2PAK Single FETs, MOSFETs RoHS