ST · FETs & Power MOSFETs · MPN STI16N65M5
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 30pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 279mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.25nF |
| Type | N-Channel |
650V 12A 5V 25W 279mΩ@10V 1 N-channel N-Channel I2PAK Single FETs, MOSFETs RoHS