ST · FETs & Power MOSFETs · MPN STI14NM50N
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 90W |
| RDS(on) | 320mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 816pF |
500V 12A 4V 90W 320mΩ@10V 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs RoHS