ST STHU65N050DM9AG

ST · FETs & Power MOSFETs · MPN STHU65N050DM9AG

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Specifications

Output Capacitance(Coss)76pF
Pd - Power Dissipation245W
Configuration-
Gate Charge(Qg)100nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.68nF

Technical details

245W 650V 4V 38mΩ@10V 1 N-channel N-Channel HU3PAK Single FETs, MOSFETs RoHS

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