ST STHU36N60DM6AG

ST · FETs & Power MOSFETs · MPN STHU36N60DM6AG

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation210W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)99mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.96nF
TypeN-Channel

Technical details

N-Channel 600V 29A 210W Surface Mount TO-263-8

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