ST STHU32N65DM6AG

ST · FETs & Power MOSFETs · MPN STHU32N65DM6AG

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)52.6nC@10V
Output Capacitance(Coss)106pF
Current - Continuous Drain(Id)37A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)0.3pF
RDS(on)97mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.211nF
TypeN-Channel

Technical details

N-Channel 650V 37A 320W Surface Mount TO-263-8

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