ST · FETs & Power MOSFETs · MPN STH80N10F7-2
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
| Type | N-Channel |
100V 80A 4.5V 110W 9.5mΩ@10V 1 N-channel N-Channel H2PAK-2 Single FETs, MOSFETs RoHS