ST · FETs & Power MOSFETs · MPN STH6N95K5-2
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 950V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 1.25Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
950V 6A 3V 110W 1.25Ω@10V 1 N-channel H2PAK-2 Single FETs, MOSFETs RoHS