ST · FETs & Power MOSFETs · MPN STH65N050DM9-7AG
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| Output Capacitance(Coss) | 76pF |
|---|---|
| Pd - Power Dissipation | 266W |
| Configuration | - |
| Gate Charge(Qg) | 100nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 38mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.68nF |
266W 650V 4V 38mΩ@10V 1 N-channel N-Channel H2PAK-7 Single FETs, MOSFETs RoHS