ST · FETs & Power MOSFETs · MPN STH60N099DM9-2AG
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 179W |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 600V 27A 179W Surface Mount H2PAK-2