ST · FETs & Power MOSFETs · MPN STH47N60DM6-2AG
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
| Type | N-Channel |
600V 36A 4.75V 250W 80mΩ@10V 1 N-channel N-Channel H2PAK-2 Single FETs, MOSFETs RoHS