ST · FETs & Power MOSFETs · MPN STH410N4F7-6AG
No reviews yet — be the first to review ST STH410N4F7-6AG.
| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 141nC@10V |
| Output Capacitance(Coss) | 3.5nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 365W |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.5nF |
| Type | N-Channel |
40V 200A 4.5V 365W 1.1mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS