ST STH320N4F6-6

ST · FETs & Power MOSFETs · MPN STH320N4F6-6

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)240nC@10V
Output Capacitance(Coss)1.87nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation340W
Reverse Transfer Capacitance (Crss@Vds)1.095nF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.8nF
TypeN-Channel

Technical details

N-Channel 40V 200A 340W Surface Mount H2PAK-6

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