ST · FETs & Power MOSFETs · MPN STH315N10F7-2
No reviews yet — be the first to review ST STH315N10F7-2.
| Gate Charge(Qg) | 180nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 315W |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.8nF |
N-Channel 100V 180A 315W Surface Mount H2PAK-2