ST STH2N120K5-2AG

ST · FETs & Power MOSFETs · MPN STH2N120K5-2AG

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Specifications

Gate Charge(Qg)5.3nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)10Ω@10V
Number1 N-channel
Input Capacitance(Ciss)124pF
TypeN-Channel

Technical details

N-Channel 1.2kV 1.5A 60W Surface Mount TO-263-3

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