ST STH290N4F6-2AG

ST · FETs & Power MOSFETs · MPN STH290N4F6-2AG

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage-
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

1 N-channel H2PAK-2 Single FETs, MOSFETs RoHS

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