ST · FETs & Power MOSFETs · MPN STH275N8F7-2AG
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 80V |
| Gate Charge(Qg) | 193nC@10V |
| Output Capacitance(Coss) | 2.05nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 315W |
| Reverse Transfer Capacitance (Crss@Vds) | 236pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.6nF |
80V 180A 4.5V 315W 2.1mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS