ST · FETs & Power MOSFETs · MPN STH200N10WF7-2
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| Gate Charge(Qg) | 93nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 3.77nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 340W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.43nF |
| Type | N-Channel |
100V 180A 4.5V 340W 4mΩ@10V 1 N-channel N-Channel H2PAK-2 Single FETs, MOSFETs RoHS