ST · FETs & Power MOSFETs · MPN STH170N8F7-2
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| Gate Charge(Qg) | 120nC@40V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.71nF |
80V 120A 4.5V 250W 3.7mΩ@10V 1 N-channel H2PAK-2 Single FETs, MOSFETs RoHS