ST STH150N10F7-2

ST · FETs & Power MOSFETs · MPN STH150N10F7-2

No reviews yet — be the first to review ST STH150N10F7-2.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)117nC@10V
Output Capacitance(Coss)1.51nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.115nF
TypeN-Channel

Technical details

N-Channel 100V 110A 250W Surface Mount H2PAK-2

Related FETs & Power MOSFETs