ST STH140N8F7-2

ST · FETs & Power MOSFETs · MPN STH140N8F7-2

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.34nF

Technical details

80V 90A 2.5V 200W 3.3mΩ@10V 1 N-channel H2PAK-2 Single FETs, MOSFETs RoHS

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