ST STH10N80K5-2AG

ST · FETs & Power MOSFETs · MPN STH10N80K5-2AG

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Specifications

Gate Charge(Qg)17.3nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)41pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation121W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)426pF
TypeN-Channel

Technical details

800V 8A 5V 121W 680mΩ@10V 1 N-channel N-Channel H2PAK-2 Single FETs, MOSFETs RoHS

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