ST STFW69N65M5

ST · FETs & Power MOSFETs · MPN STFW69N65M5

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Specifications

Gate Charge(Qg)143nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)37mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.42nF
TypeN-Channel

Technical details

650V 58A 4V 330W 37mΩ@10V 1 N-channel N-Channel TO-3PF Single FETs, MOSFETs RoHS

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