ST STFU9N65M2

ST · FETs & Power MOSFETs · MPN STFU9N65M2

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)790mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)310pF

Technical details

650V 5A 2V 20W 790mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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