ST STFU8N60DM2

ST · FETs & Power MOSFETs · MPN STFU8N60DM2

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation25W
RDS(on)295mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

600V 12A 5V 25W 295mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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