ST STFU28N65M2

ST · FETs & Power MOSFETs · MPN STFU28N65M2

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)35nC
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
RDS(on)180mΩ@10V
Input Capacitance(Ciss)1.44nF
TypeN-Channel

Technical details

650V 20A 4V 30W 180mΩ@10V N-Channel TO-220FP Single FETs, MOSFETs RoHS

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