ST STFU18N65M2

ST · FETs & Power MOSFETs · MPN STFU18N65M2

No reviews yet — be the first to review ST STFU18N65M2.

Specifications

Gate Charge(Qg)20nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF

Technical details

650V 12A 3V 25W 330mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs