ST STFU16N65M2

ST · FETs & Power MOSFETs · MPN STFU16N65M2

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)718pF

Technical details

N-Channel 650V 11A 25W Through Hole TO-220FP

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