ST STFU15NM65N

ST · FETs & Power MOSFETs · MPN STFU15NM65N

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Specifications

Gate Charge(Qg)33.3nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)983pF

Technical details

650V 12A 4V 30W 380mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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