ST STFU11N65M2

ST · FETs & Power MOSFETs · MPN STFU11N65M2

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
RDS(on)680mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)0.9pF
Input Capacitance(Ciss)410pF
TypeN-Channel

Technical details

650V 7A 4V 25W 680mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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