ST STFI9N60M2

ST · FETs & Power MOSFETs · MPN STFI9N60M2

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Specifications

Gate Charge(Qg)10nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)680fF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)320pF

Technical details

650V 5.5A 2V 20W 780mΩ@10V 1 N-channel TO-281-3 Single FETs, MOSFETs RoHS

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