ST STFI6N65K3

ST · FETs & Power MOSFETs · MPN STFI6N65K3

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Specifications

Gate Charge(Qg)33nC@500V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)880pF

Technical details

N-Channel 650V 5.4A 30W Through Hole TO-281-3

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