ST STFI20N65M5

ST · FETs & Power MOSFETs · MPN STFI20N65M5

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)3.7pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.434nF

Technical details

650V 18A 3V 48W 190mΩ@10V 1 N-channel I2PAKFP(TO-281) Single FETs, MOSFETs RoHS

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