ST STFI15N65M5

ST · FETs & Power MOSFETs · MPN STFI15N65M5

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)2.6pF
RDS(on)340mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)816pF

Technical details

650V 11A 4V 85W 340mΩ@10V 1 N-channel I2PAKFP(TO-281) Single FETs, MOSFETs RoHS

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