ST STFI13N65M2

ST · FETs & Power MOSFETs · MPN STFI13N65M2

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)27.5pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF
TypeN-Channel

Technical details

650V 10A 4V 25W 430mΩ@10V 1 N-channel N-Channel I2PAKFP(TO-281) Single FETs, MOSFETs RoHS

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