ST STFH10N60M2

ST · FETs & Power MOSFETs · MPN STFH10N60M2

No reviews yet — be the first to review ST STFH10N60M2.

Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13.5nC@10V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)0.84pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

N-Channel 600V 7.5A 25W Through Hole TO-220FP-3

Related FETs & Power MOSFETs