ST STF9NM60N

ST · FETs & Power MOSFETs · MPN STF9NM60N

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)17.4nC@10V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1.45pF
RDS(on)745mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)452pF

Technical details

N-Channel 600V 6.5A Through Hole TO-220FP

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