ST STF7N60M2

ST · FETs & Power MOSFETs · MPN STF7N60M2

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Specifications

Gate Charge(Qg)8.8nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)271pF
TypeN-Channel

Technical details

N-Channel 600V 5A 20W Through Hole TO-220FP

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