ST STF6N60M2

ST · FETs & Power MOSFETs · MPN STF6N60M2

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)700fF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)232pF
TypeN-Channel

Technical details

N-Channel 600V 4.5A 20W Through Hole TO-220FP

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