ST STF57N65M5

ST · FETs & Power MOSFETs · MPN STF57N65M5

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Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)63mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 650V 42A 250W Through Hole TO-220-3

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