ST STF4N52K3

ST · FETs & Power MOSFETs · MPN STF4N52K3

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Specifications

Drain to Source Voltage525V
Gate Charge(Qg)11nC@10V
Current - Continuous Drain(Id)2.5A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation20W
RDS(on)2.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)334pF

Technical details

525V 2.5A 4.5V 20W 2.6Ω@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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