ST STF42N60M2-EP

ST · FETs & Power MOSFETs · MPN STF42N60M2-EP

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)76mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.37nF

Technical details

N-Channel 34A 40W Through Hole TO-220FP

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