ST STF40N65M2

ST · FETs & Power MOSFETs · MPN STF40N65M2

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Specifications

Gate Charge(Qg)56.5nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)32A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)2.7pF
RDS(on)99mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.355nF
TypeN-Channel

Technical details

650V 32A 4V 25W 99mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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