ST STF35N65M5

ST · FETs & Power MOSFETs · MPN STF35N65M5

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Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)27A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation40W
RDS(on)98mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.75nF

Technical details

650V 27A 5V 40W 98mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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