ST · FETs & Power MOSFETs · MPN STF35N65DM2
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| Gate Charge(Qg) | 56.3nC@520V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.54nF |
N-Channel 650V 32A 40W Through Hole TO-220FP