ST STF34N65M5

ST · FETs & Power MOSFETs · MPN STF34N65M5

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Specifications

Gate Charge(Qg)62.5nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)6.3pF
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
TypeN-Channel

Technical details

650V 28A 5V 35W 110mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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