ST STF33N60M2

ST · FETs & Power MOSFETs · MPN STF33N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)45.5nC@10V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)26A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)125mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.781nF
TypeN-Channel

Technical details

N-Channel 600V 26A 35W Through Hole TO-220FP

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